Influence of initial crystalline phase of TiO2 to obtain TiN thin films from sol-gel route by rapid thermal nitridation process - Université Jean-Monnet-Saint-Étienne
Article Dans Une Revue Progress in Solid State Chemistry Année : 2024

Influence of initial crystalline phase of TiO2 to obtain TiN thin films from sol-gel route by rapid thermal nitridation process

Résumé

A C T Titanium Nitride (TiN) is widely used in many industrial sectors for its outstanding performances including its mechanical properties, high chemical and thermal stability. Associated with its plasmonic behavior, TiN thin films are very promising for the manufacturing of optical metasurfaces devices or new plasmonic materials. Among the processes that make it easy to obtain metal nitride coatings, nitriding of metal oxide films has become increasingly popular in recent years. A multitude of synthesis processes can be used to obtain TiO 2 films, with different crystalline states (amorphous, anatase or rutile) depending on the technique used, which can then be converted into TiN coatings. In this paper, the effect of the initial crystalline state of TiO 2 layers was investigated on the structural properties, plasmonic properties and the friction behavior of TiN thin films obtained by Rapid Thermal Nitridation (RTN). The results indicate that, regardless of the crystalline state of the starting TiO 2 film, the RTN process leads to complete nitridation of TiN coating. Moreover, even though surface morphology and friction properties differ slightly, depending on the crystallization of the starting TiO 2 , plasmonic properties remain very similar, thus highlighting the great versatility and uniformity of this nitriding technique, enabling TiN to be produced for a wide range of applications.
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Dates et versions

hal-04677912 , version 1 (28-08-2024)

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Victor Vallejo-Otero, Arnaud Valour, Hugo Bruhier, Yannick Bleu, Nadège Ollier, et al.. Influence of initial crystalline phase of TiO2 to obtain TiN thin films from sol-gel route by rapid thermal nitridation process. Progress in Solid State Chemistry, 2024, pp.100462. ⟨10.1016/j.progsolidstchem.2024.100462⟩. ⟨hal-04677912⟩
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