%0 Journal Article %T Laser-induced damage threshold of sapphire in nanosecond, picosecond and femtosecond regimes %+ Laboratoire Lasers, Plasmas et Procédés photoniques (LP3) %+ Laboratoire d'optique appliquée (LOA) %A Uteza, O. %A Bussiere, Benoît %A Canova, F. %A Chambaret, J.-P. %A Delaporte, Philippe %A Itina, Tatiana %A Sentis, Marc %< avec comité de lecture %@ 0169-4332 %J Applied Surface Science %I Elsevier %V 254 %N 4 %P 799-803 %8 2007-12-15 %D 2007 %R 10.1016/j.apsusc.2007.09.046 %K Laser-induced damage %K Sapphire %K Femtosecond %K Picosecond %K Nanosecond %Z PACS classification codes: 42.70.Hj; 77.84.−s %Z Engineering Sciences [physics]/Chemical and Process EngineeringJournal articles %X The surface laser-induced damage threshold fluence of sapphire is determined under various experimental conditions concerning the material irradiation (femtosecond, picosecond and nanosecond temporal regimes) and preparation (surface state). The results are of interest for optimising laser micromachining processes and for robust operation of high-peak power femtosecond Ti:sapphire laser chains. %G English %Z FESTIC %L ujm-00376961 %U https://ujm.hal.science/ujm-00376961 %~ UNIV-ST-ETIENNE %~ X %~ ENSTA %~ CNRS %~ UNIV-AMU %~ X-LOA %~ X-DEP %~ X-DEP-PHYS %~ PARISTECH %~ ENSTA_LOA %~ LP3 %~ UDL %~ ANR