Application of a two-temperature model for the investigation of the periodic structure formation on Si surface in femtosecond laser interactions - Université Jean-Monnet-Saint-Étienne Access content directly
Journal Articles Journal of Optoelectronics and Advanced Materials Year : 2010

Application of a two-temperature model for the investigation of the periodic structure formation on Si surface in femtosecond laser interactions

Abstract

We consider the case of surface irradiation by a small number of femtosecond laser shots leading to the formation of surface ripples. To explain this effect, we propose a numerical model that accounts for the following processes: (i) interference of the laser irradiation with an electromagnetic surface wave propagating on a silicon sample; (ii) free carrier formation and laser energy absorption; (iii) energy relaxation and electron-phonon coupling. We perform numerical calculations taking into account the interference of a surface wave with laser; and present the obtained simulation results in order to explain formation mechanisms of the experimentally observed patterns
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Dates and versions

ujm-00530631 , version 1 (29-10-2010)

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  • HAL Id : ujm-00530631 , version 1

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Thibault Jy Derrien, Thierry Sarnet, Marc Sentis, Tatiana Itina. Application of a two-temperature model for the investigation of the periodic structure formation on Si surface in femtosecond laser interactions. Journal of Optoelectronics and Advanced Materials, 2010, 12 (3), pp.610 - 615. ⟨ujm-00530631⟩
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