%0 Journal Article %T Investigations of the ionizing radiation induced effects in ultra-thin strained-silicon layers on insulator using confocal microscopy measurements %+ Direction des Applications Militaires (DAM) %+ Laboratoire Hubert Curien (LHC) %+ Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI) %A Gaillardin, M. %A Girard, Sébastien %A Ouerdane, Y. %A Boukenter, A. %A Andrieu, F. %A Tabone, C. %A Faynot, O. %< avec comité de lecture %@ 0022-3093 %J Journal of Non-Crystalline Solids %I Elsevier %V 357 %P 1989-1993 %8 2011-02-23 %D 2011 %R 10.1016/j.jnoncrysol.2010.12.072 %K Strained silicon %K Radiation %K Confocal microscopy %Z Physics [physics]/Physics [physics]/Optics [physics.optics]Journal articles %X This study describes investigations on the ionizing radiation effects induced in ultra-thin Silicon-On-Insulator (SOI) devices. Electrical tests exhibit various behaviors after irradiation which depends on the intrinsic mechanical stress of the thin silicon film. The electrical characteristics of strained Silicon-On-Insulator devices evidence a decrease of the subthreshold slope that may be related to a radiation induced degradation of the carrier mobility. This appears in addition to the deviation of the threshold voltage classically observed on irradiated Silicon-On-Insulator samples. The major issue discussed in this paper is whether a strain relaxation or the buildup of interface states at strained silicon/silica interfaces leads to the observed carrier mobility degradation. Radiation-induced mechanisms are then discussed with electrical measurements and optical spectra obtained by confocal microscopy measurements which have already demonstrated their potential to probe irradiated materials. %G English %L ujm-00587483 %U https://ujm.hal.science/ujm-00587483 %~ UNIV-ST-ETIENNE %~ CEA %~ IOGS %~ CNRS %~ LAHC %~ PARISTECH %~ DRT %~ DAM %~ LETI %~ CEA-GRE %~ UDL