Role of surface band bending and hole accumulation in laser-assisted field evaporation of semiconductors - Université Jean-Monnet-Saint-Étienne
Communication Dans Un Congrès Année : 2012

Role of surface band bending and hole accumulation in laser-assisted field evaporation of semiconductors

Tatiana Itina
Angela Vella
B. Deconihout
Fichier non déposé

Dates et versions

ujm-00711690 , version 1 (25-06-2012)

Identifiants

  • HAL Id : ujm-00711690 , version 1

Citer

Elena Silaeva, Tatiana Itina, Angela Vella, B. Deconihout. Role of surface band bending and hole accumulation in laser-assisted field evaporation of semiconductors. International Field Emission Society (IFES) 2012, May 2012, Alabama, United States. ⟨ujm-00711690⟩
74 Consultations
0 Téléchargements

Partager

More