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Journal Articles Annalen der Physik Year : 2012

Probing the thermal response of a silicon field emitted by ultrafast Laser Assistet Atom Probe Tomography

Angela Vella
Jonathan Houard
Tatiana Itina
Bernard Deconihout

Abstract

The interaction between an ultrashort laser pulse and a sub-wavelength silicon tip under a high static electric field is investigated numerically and experimentally. Using an original autocorrelation setup of the laser-assisted atom probe tomography, the temporal evolution of the lattice temperature at the tip apex is experimentally monitored. An ultrafast cooling process, related to a confinement of the heating at the surface, is reported. This confinement is well predicted by a new model taking into account the free charges generation by photon absorption, their drift-diffusion motion under the electric field and their energy relaxation to the lattice.

Dates and versions

ujm-00866966 , version 1 (27-09-2013)

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Cite

Angela Vella, E. Silaeva, Jonathan Houard, Tatiana Itina, Bernard Deconihout. Probing the thermal response of a silicon field emitted by ultrafast Laser Assistet Atom Probe Tomography. Annalen der Physik, 2012, 525 (1-2), pp.L1-L5. ⟨10.1002/andp.201200182⟩. ⟨ujm-00866966⟩
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