Laser-induced damage threshold of sapphire in nanosecond, picosecond and femtosecond regimes - Université Jean-Monnet-Saint-Étienne Access content directly
Journal Articles Applied Surface Science Year : 2007

Laser-induced damage threshold of sapphire in nanosecond, picosecond and femtosecond regimes

Abstract

The surface laser-induced damage threshold fluence of sapphire is determined under various experimental conditions concerning the material irradiation (femtosecond, picosecond and nanosecond temporal regimes) and preparation (surface state). The results are of interest for optimising laser micromachining processes and for robust operation of high-peak power femtosecond Ti:sapphire laser chains.

Dates and versions

ujm-00376961 , version 1 (20-04-2009)

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O. Uteza, Benoît Bussiere, F. Canova, J.-P. Chambaret, Philippe Delaporte, et al.. Laser-induced damage threshold of sapphire in nanosecond, picosecond and femtosecond regimes. Applied Surface Science, 2007, 254 (4), pp.799-803. ⟨10.1016/j.apsusc.2007.09.046⟩. ⟨ujm-00376961⟩
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