Investigations on MGy Total Ionizing Dose Effects in CMOS Technologies - Université Jean-Monnet-Saint-Étienne Access content directly
Conference Poster Year : 2015

Investigations on MGy Total Ionizing Dose Effects in CMOS Technologies

M. Gaillardin
  • Function : Author
  • PersonId : 951922
Philippe Paillet
Sylvain Girard
Melanie Raine
  • Function : Author
Duhamel Olivier
  • Function : Author
  • PersonId : 1057943

Abstract

This work investigates MGy Total Ionizing Dose effects in CMOS technologies. Large TID-induced electrical shifts are observed in devices with thin dielectrics. Trapping and detrapping properties are discussed using dedicated irradiation/annealing experiments
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Dates and versions

ujm-01185833 , version 1 (21-08-2015)

Identifiers

  • HAL Id : ujm-01185833 , version 1

Cite

M. Gaillardin, Philippe Paillet, Vincent Goiffon, Martial Martinez, Sylvain Girard, et al.. Investigations on MGy Total Ionizing Dose Effects in CMOS Technologies. Nuclear and Space Radiation Effects Conference (NSREC 2015), Jul 2015, Boston, United States. ⟨ujm-01185833⟩
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