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Conference Papers Year : 2015

Multi-MGy Radiation Hardened CMOS Image Sensor: Design, Characterization and Total Ionizing Dose Tests

Abstract

The radiation hardness of a radiation-hardened-by-design CMOS Image Sensor is validated up to several MGy(SiO2) (>100 Mrad) of TID. The perspectives in terms of further improvements and applications are discussed
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Dates and versions

ujm-01185888 , version 1 (21-08-2015)

Identifiers

  • HAL Id : ujm-01185888 , version 1

Cite

Vincent Goiffon, Franck Corbière, S. Rolando, Magali Estribeau, Pierre Magnan, et al.. Multi-MGy Radiation Hardened CMOS Image Sensor: Design, Characterization and Total Ionizing Dose Tests. Nuclear and Space Radiation Effects Conference (NSREC 2015), IEEE, Jul 2015, Boston, United States. ⟨ujm-01185888⟩
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