Investigations on the Vulnerability of Advanced CMOS Technologies to MGy Dose Environments - Université Jean-Monnet-Saint-Étienne Access content directly
Journal Articles IEEE Transactions on Nuclear Science Year : 2013

Investigations on the Vulnerability of Advanced CMOS Technologies to MGy Dose Environments

Abstract

This paper investigates the TID sensitivity of silicon-based technologies at several MGy irradiation doses to evaluate their potential for high TID-hardened circuits. Such circuits will be used in several specific applications suc as safety systems of current or future nuclear power plants considering various radiation environments including normal and accidental operating conditions, high energy physics instruments, fusion experiments or deep space missions. Various device designs implemented in well established bulk silicon and Partially Depleted SOI technologies are studied here up to 3 MGy. Furthermore, new insights are given on the vulnerability of more advanced technologies including planar Fully Depleted SOI and multiple-gate SOI transistors at such high dose. Potential of tested technologies are compared and discussed for stand-alone integrated circuits.

Domains

Electronics

Dates and versions

ujm-00854044 , version 1 (26-08-2013)

Identifiers

Cite

M. Gaillardin, Sylvain Girard, Philippe Paillet, Jean-Luc Leray, V. Goiffon, et al.. Investigations on the Vulnerability of Advanced CMOS Technologies to MGy Dose Environments. IEEE Transactions on Nuclear Science, 2013, 60 (4), pp.2590 - 2597. ⟨10.1109/TNS.2013.2249095⟩. ⟨ujm-00854044⟩
86 View
0 Download

Altmetric

Share

Gmail Mastodon Facebook X LinkedIn More